Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3
نویسندگان
چکیده
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination far-infrared and infrared spectroscopic ellipsometry, as well first principle calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained wavelength-by-wavelength (a.k.a. point-by-point) basis numerical reduction subtle free charge carrier Drude model contribution. four-parameter semi-quantum applied to determine sixteen pairs infrared-active transverse longitudinal modes, including the high-frequency dielectric constant, $\varepsilon_{\infty}=4.05\pm 0.05$. The Lyddane-Sachs-Teller relation then gives access static $\varepsilon_{\mathrm{DC}}=10.55\pm 0.07$. All experimental results in excellent agreement with our density functional theory calculations previously values, where existent. We also perform Hall effect measurements unintentionally doped $n$-type sample electron $n=(2.81 \pm 0.01)\times 10^{17}$~cm$^{-3}$, mobility $\mu=(112 3)$~cm$^{2}$/(Vs), an effective mass parameter $(0.208\pm0.006)m_e$. Density parameters compare very electrical measurements. Our parameter, which independently any other technique, represents bottom curvature $\Gamma$ point In$_2$O$_3$ previous extrapolations. use terahertz ellipsometry measure quasi-static response In$_2$O$_3$, validates constant relation.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0052848